features low cost diffused junction low leakage low forward voltage drop high current capability and s im ilar s olvents mechanical data case:jedec do-15,molded plastic terminals: axial lead ,solderable per mil- std-750,method 2026 polarity: color band denotes cathode weight: 0.014 ounces,0.39 grams mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. rgp 20d rgp 20g rgp 20j units maximum recurrent peak reverse voltage v rrm 200 400 600 v max imum rms v oltage v rms 140 280 420 v maximum dc blocking voltage v dc 200 400 600 v maximum average forw ard rectified current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @t j =125 maximum instantaneous forw ard voltage @ 2.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr 250 ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja <d operating junction temperature range t j storage temperature range t stg note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. r g p2 0 a (z) ---r g p2 0 j (z) d o - 1 5 50 35 50 rgp 20a easily cleaned with freon,alcohol,isopropanol 100 voltage range: 50 --- 600 v current: 2.0 a a i fsm 3. thermal resistance f rom junction to ambient. 2. measured at 1.0mhz and applied rev erse v oltage of 4.0v dc. - 55---- + 150 - 55---- + 150 45 18 a 150 i r 80.0 5.0 100.0 1.3 100 rgp 20b 2.0 a 70 f a st r e c o ve r y r ec t i f i er s i f(av) the plastic material carries u/l recognition 94v-0 dimensions in millimeters www.diode.kr diode semiconductor korea
.2 t j =25 f=1mhz 1 .1 2 4 .4 1 . 0 2 40 10 20 60 100 4 10 204 0 100 0 1 10 100 20 40 60 80 180 100 t j =125 8.3ms single half sine-wave 0.50 0 0 25 50 1.00 1.50 2.0 10075 125 175 150 si ngl e phase hal f w ave 60hz resi st i ve or inductive load t j =25 pulse width=300 s 0.2 0 0.01 0.04 0.1 1.0 10 100 0.4 0.6 0.8 1 1.2 1.8 1.4 1.6 2 set time base for 50/100 ns /cm amperes instantaneous forward current amperes average forward current amperes peak forward curge current fi g. 3--typi cal juncti on capaci tance number of cycles at 60hz reverse voltage,volts fi g. 5--forward current derati ng curve fi g. 4--typi cal forward characteri sti cs forward voltage,volts ambient temperature, fig.2 --peak forward surge vurrent junction capacitance,pf r g p 2 0 a (z) -- - r g p 2 0 j (z) fi g. 1 --reverse recovery ti me characteri sti c and test ci rcui t di agram 2.rese time=10ns max.source impedance=500 . notes:1.rese time=7ns max.input impedance=1m .22pf. pulse generator (note2) d.u.t. 1 n.1. 50 n.1. osci lloscope (note 1) (+) 50vdc (approx) (-) 10 n.1. (-) (+) t rr -1.0a -0.25a 0 +0.5a 1cm www.diode.kr diode semiconductor korea
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